GaN Meets SiC for Megahertz-Class High-Voltage Power (Podcast)

In this episode of PowerUP, we speak with Professor Joseph Bernstein from Ariel University, a pioneer in power electronics with a deep background from MIT and extensive experience in GaN and SiC device reliability. He shares insights into his groundbreaking research on using GaN-based gate drivers to drive SiC transistors at megahertz frequencies efficiently. We discuss the technical motivations behind his hybrid topologies, energy recovery through adiabatic-like gate drive design, and his innovative use of ring oscillators for compact, high-frequency power systems.

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Debut for vertical rutile GeO₂ Schottky barrier diode

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Fraunhofer team makes InP-on-GaAs wafers up to 150 mm