Fraunhofer team makes InP-on-GaAs wafers up to 150 mm

Working with the company III/V-Reclaim, scientists at the Fraunhofer Institute for Solar Energy Systems ISE have succeeded in producing high-quality InP on InP-on-GaAs wafers with up to 150 mm diameter.

These new wafers can effectively replace classic InP in a variety of applications, offering a scalable pathway to lower cost. The research team developed a process to deposit a thin layer of high-quality InP on GaAs. Following a special surface treatment, these wafers are delivered epi-ready, enabling customers to directly grow III-V epitaxial structures and manufacture high-performance InP-based semiconductor devices.

“Companies can use our new InP-on-GaAs substrates to manufacture high-efficiency devices”, explains Carmine Pellegrino, project manager at Fraunhofer ISE. ”However, it costs much less than InP and there are no limitations in terms of scalability to even 8-inch diameter wafers.”