EPC Space Unveils Industry-Leading 300 V Rad-Hard GaN FET for High-Power Satellite and Propulsion Systems Jun 25 Written By Jae Park Courtesy of Power Electronics News Jae Park
EPC Space Unveils Industry-Leading 300 V Rad-Hard GaN FET for High-Power Satellite and Propulsion Systems Jun 25 Written By Jae Park Courtesy of Power Electronics News Jae Park
