A new milestone in 2D layer-tronics?

A new study published in Nano Letters by researchers led by Singapore University of Technology and Design (SUTD), may help address the challenge of integrating ultrathin 2D transistors and interconnects without sacrificing contact performance.

Using state-of-the-art density functional theory (DFT) simulations, they showed that when a single layer of the semiconductor bismuth is sandwiched between two layers of the 2D compound semiconductor MoS2, the atoms reorganise from a slightly corrugated (or buckled) structure into a perfectly flat one.