Validity of EPC Chinese GaN patent confirmed

Efficient Power Conversion Corporation (EPC) has announced that the Beijing IP Court has denied an appeal filed by Innoscience Technology, thereby reaffirming the validity of EPC’s Chinese Patent No. ZL201080015425.X, 'Compensated gate MISFET and method for fabricating the same' (the Compensated Gate patent).

Two of EPC’s patents covering enhancement-mode GaN FETs and their fabrication had been challenged by Innoscience (Suzhou) in China. The China National Intellectual Property Administration (CNIPA) had previously validated both patents in April and May 2024, but Innoscience requested reconsideration of the decision concerning the Compensated Gate Patent in.