Veeco announces 2D semiconductor breakthrough

Veeco Instruments has announced that the University of Michigan has published a breakthrough study on atomic layer deposition (ALD) of 2D MoS2 using di-tert-butyl disulphide (TBDS) as a replacement for hydrogen sulphide. Chemistry of Materials journal published the work that was performed on Veeco’s Fiji G2 plasma enhanced ALD (PEALD) system.

Professor of Chemistry, Materials Science and Engineering at the University of Michigan Ageeth Bol and her team of students and postdoctoral students used a PEALD process to deposit high-quality 2D MoS2 using an organometallic precursor and TBDS, in combination with hydrogen plasma. This research introduces a method of using TBDS liquid that is significantly less hazardous than H2S and eliminates the need for expensive safety measures associated with H2S use.