WIN Semis announces new 0.12μm GaN power process

Written By Jae Park

Compound semiconductor firm WIN Semiconductors has launched a 0.12 μm gate-length D-mode GaN HEMT technology on SiC substrates, available for high volume production in Q3 2025. .

Engineered for high-power applications across K-Band to V-Band frequencies, with 28V operation, the process is said to incorporate multiple transistor improvements providing a combination of high breakdown voltage, enhanced linearity, and robust operation in continuous wave (CW) high-compression scenarios.

According to WIN, the technology’s source-coupled field plate design ensures a typical gate-to-drain breakdown voltage of 120 V, supporting high power density and system reliability.

Jae Park
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